JPS5994892A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS5994892A JPS5994892A JP20506782A JP20506782A JPS5994892A JP S5994892 A JPS5994892 A JP S5994892A JP 20506782 A JP20506782 A JP 20506782A JP 20506782 A JP20506782 A JP 20506782A JP S5994892 A JPS5994892 A JP S5994892A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- layer
- resonator
- face
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000801954 Karana Species 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20506782A JPS5994892A (ja) | 1982-11-22 | 1982-11-22 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20506782A JPS5994892A (ja) | 1982-11-22 | 1982-11-22 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994892A true JPS5994892A (ja) | 1984-05-31 |
| JPS6343910B2 JPS6343910B2 (en]) | 1988-09-01 |
Family
ID=16500875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20506782A Granted JPS5994892A (ja) | 1982-11-22 | 1982-11-22 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994892A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2742926A1 (fr) * | 1995-12-22 | 1997-06-27 | Alsthom Cge Alcatel | Procede et dispositif de preparation de faces de laser |
| US8432948B2 (en) | 2008-07-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0671214U (ja) * | 1991-08-30 | 1994-10-04 | 株式会社エフ．イー．シーチェーン | タイヤチェーン |
-
1982
- 1982-11-22 JP JP20506782A patent/JPS5994892A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2742926A1 (fr) * | 1995-12-22 | 1997-06-27 | Alsthom Cge Alcatel | Procede et dispositif de preparation de faces de laser |
| EP0783191A1 (fr) * | 1995-12-22 | 1997-07-09 | Alcatel | Procédé et dispositif de Préparation de faces de laser |
| US8432948B2 (en) | 2008-07-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
| JP5443356B2 (ja) * | 2008-07-10 | 2014-03-19 | 株式会社東芝 | 半導体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6343910B2 (en]) | 1988-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3911140B2 (ja) | 半導体レーザの製造方法 | |
| US4329660A (en) | Semiconductor light emitting device | |
| JP2870486B2 (ja) | 半導体レーザ素子 | |
| JPS5994892A (ja) | 半導体レ−ザ | |
| US4461008A (en) | Terraced heterostructure semiconductor laser | |
| JPS5939082A (ja) | 半導体レ−ザ | |
| JP3254812B2 (ja) | 半導体レーザ及びその製造方法 | |
| JPH02288287A (ja) | 半導体レーザ素子 | |
| JP2002124702A (ja) | 窒化ガリウム系半導体発光素子 | |
| JPH01289289A (ja) | 半導体レーザ装置 | |
| EP0713275B1 (en) | Method for fabricating a semiconductor laser diode | |
| JP3456118B2 (ja) | 発光素子及びその製造方法および光ディスク装置 | |
| JP3062510B2 (ja) | 半導体光素子 | |
| JPH03227086A (ja) | 半導体レーザ素子及びその製造方法 | |
| JPH0365669B2 (en]) | ||
| JP2561802Y2 (ja) | 半導体レーザ | |
| JPS6334993A (ja) | 半導体レ−ザ装置 | |
| JP2001244562A (ja) | 半導体発光装置 | |
| JP3138503B2 (ja) | 半導体レーザ素子 | |
| KR100261249B1 (ko) | 반도체 레이저 소자 및 그 제조방법 | |
| JPH0918082A (ja) | 半導体レーザ素子 | |
| JPH05299769A (ja) | 半導体レーザの製造方法 | |
| KR100366696B1 (ko) | 레이저 다이오드 및 그 제조방법 | |
| JPS603172A (ja) | 半導体レ−ザ | |
| JPH04206782A (ja) | 発光ダイオード |